Tagore Technology 3 New High Power RF Switches for HF and RF 200W applicaitons

Tagore Technology has introduced 3 New High Power RF Switches to their portfolio of high-performance semiconductor products allowing design engineers to reduce RF circuit losses and circuit complexity, true SWaP-C Technology.

These 2 nd Generation symmetrical reflective switches are designed for high-power switching applications. These switches cover from 1MHz to 30MHz, 30Mhz  to 1000MHz bandwidth and provide low insertion loss, high isolation, and high linearity within a small package size. Suitable for applications requiring low insertion loss, high isolation, and high linearity. Package Quad Flat No lead (QFN) 7x7mm 48 leads plastic package. 

These Gen2 devices have half the insertion loss of our original Gen1 products introduced just five years ago. This reduction of insertion loss supports power levels up to 200 watts-CW across the respective bands of operation. The onboard voltage generator & control circuit helps with the reduction of external components in layout, it’s a win-win for RF design engineers to hit their SWaP-C targets.

The TS86236P device is an SPDT 200W-cw RF Switch covering 30MHz to 1GHz with high port-to-port isolation.

The sister device, the TS86436P is a SP4T 200W-cw RF Switch covering the same band with great isolation.

The TS86246P is an SPDT 200W-cw RF Switch covering 1MHz to 30MHz, providing a great alternative to those unreliable mechanical relay switches, eliminating off-boarding hardware and losses through a bunch of cables and wire harnesses.

It’s now time to rethink your architecture to improve performance by reducing losses in the transmit chain, reducing pcb real-estate & component cost & circuit complexity.

 Here is a quick eye chart for review:

For more details and data sheets: Contact the Tagore sales team at: https://www.tagoretech.com/page.php?page-id=7