Blog Details

Tagore Technology Inc. TSL8329M, Dual-channel integrated RF front-end -Swith with LNA


Tagore Technology Inc release a new receiver protection device TSL8329M, which is a dual-channel, integrated RF, front-end, multichip module. It is designed for different applications like 4G/5G Infrastructure Radios, Small Cells and Cellular Repeaters, Phase Array Radar, and SDARS applications.

The RF front-end device operates from 2.0 - 4.2 GHz RF frequency. Tagore Technology Inc configured TSL8329M in dual channels with a cascading, two-stage of LNA with a high GaN SPDT RF switch.

Mode of Operations:


  • This configuration of high gain mode cascaded two-stage RF LNA with RF SPDT switch offer a high gain of 32 dB at 3.6 GHz low noise figure of 1 dB with a typical output third-order intercept point (OIP3) of 35 dBm at high gain mode.
  • In the low gain mode of this RF front-end switch, one stage of the two-stage LNA is in the bypass and provides 13 dB of RF signal gain at a lower current of 45 mA.
  • In the power-down mode of TSL8329M, the LNAs are turned off and this device draws 5 mA.


 In transmit operation of Tagore receiver protections device TSL8329M, when RF inputs are connected to a terminal pin of it (TERM-CHA or TERM-CHB), the switch provides a very low insertion loss of 0.45 dB at 3.6GHz and

This RF front-end switch will handle long-term evolution (LTE) average power of 9 dB and peak-to-average ratio (PAR)) of 43 dBm for the full life of this RF switch with LNA device operation.

The device TSL8329M comes in a RoHS-compliant 6 mm × 6 mm, 40-lead LFCSP package.

Prime Specifications are below:

Gain @ 3.6GHz: 32dB (High Gain mode) @ 3.6GHz: 13dB (Low Gain mode)

NF @ 3.6GHz: 1.0dB (High Gain mode) @ 3.6GHz: 0.9dB (Low Gain mode)

OP1dB@ 3.6GHz: 20dBm (High Gain mode) @ 3.6GHz: 10.5dBm (Low Gain mode)

Electrical specifications:

Operating frequency: 2.0 to 4.2GHz

High Isolation: RXOUT-CHA & RXOUT-CHB: 40 dB typical

TERM-CHA and TERM-CHB: 55 dB typical

Insertion loss @ 3600MHz: 0.45dB (TX mode)

High power handling at TCASE = 105°C Full lifetime

LTE average power (9 dB PAR): 43 dBm

High OIP3 (high gain mode): 35 dBm typical

High gain mode current: 90 mA typical at 5 V

Low gain mode current: 45 mA typical at 5 V

 For More information about TSL8329M: Dual channel 2.0 – 4.2 GHz 20Watt Receiver Front End:

For Engineering and Sales support contact:



Copyright © 2022, AEnon Technologies PVT LTD All Rights Reserved